2021年12期
刊物介紹
本刊由中國原子能科學(xué)研究院主辦，1959年創(chuàng)刊，國內(nèi)外公開發(fā)行，全國性學(xué)術(shù)與技術(shù)兼顧的原子能類核心期刊，先后被美國工程信息公司《EI Compendex》數(shù)據(jù)庫、美國化學(xué)文摘《CA》、日本《科學(xué)技術(shù)文獻速報》、《中國科學(xué)引文數(shù)據(jù)庫》、《中國學(xué)術(shù)期刊（光盤版）》、《方正Apabi電子期刊》、《中國科技期刊數(shù)據(jù)庫》、《CEPS中文電子期刊服務(wù)》等收錄，并已入網(wǎng)“萬方數(shù)據(jù)——數(shù)字化期刊群”。主要刊登核科學(xué)技術(shù)方面具有創(chuàng)造性的科技成果，旨在促進核科學(xué)與技術(shù)方面的交流、核技術(shù)與其它科學(xué)技術(shù)間的交叉滲透，推動核科技在國民經(jīng)濟方面的應(yīng)用。
原子能科學(xué)技術(shù)
電子器件輻射效應(yīng)專欄
- Circuit-level Modeling and Simulation of Single Event Effects in CMOS Electronics
- Physics-based Circuit-level Analysis of MCU Characteristics in Bulk CMOS SRAM
- Degradation Characteristic of Proton Irradiated 8T CMOS Image Sensor
- 10 MeV Proton Radiation Effect on 8-Transistor CMOS Star Sensor Performance
- Radiation-induced Dark Current Random Telegraph Signal on CMOS Image Sensor
- Study on Device Characteristics of High-temperature Radiation-hardened SOI CMOS Process
- Comprehensive Understanding of Hot Carrier Effect of PDSOI NMOS Devices Fabricated on Modified Wafer
- Single-event Burnout Effect on Radiation-hardened High-voltage NMOS
- Dose Detecting of RADFETs Based on PMOS Extended to Elevated Temperature Applications
- Investigation of Ionization-induced Parameter Degradation in GLPNP Bipolar Transistors at Different Temperatures
- Comparative Experimental Study on Space Electrostatic Discharge Effect and Single Event Effect of 130 nm SOI D Flip-flop Chains
- Research on Single Event Transient Effect Protection of Switching Power Supply for Satellite Payload
- Characterization of Single Event Transient in 14 nm FinFET Technology
- High Energy Proton Radiation Effect on Flexible Thin-film Inverted Metamorphic Triple-junction Solar Cell
- Threshold Voltage Model for DSOI MOSFET Considering Back-gate Current
- Testing and Characterization of GaN-based MOSFET at Space Cryogenic Temperature
- Design on Front-end Readout ASIC with Variable Gain and Wide Dynamic Range for 3D Si PIN Array Thermal Neutron Detector
- Primary Testing Performance of Designed Wide-dynamic Range Gamma Ray Dosimeter Based on Double GM Counters
- Adverse Effect of Inappropriately Implementing Source-isolation Mitigation Technique
- Analysis of Cavity SGEMP of Cylindrical Cavity at Pulsed Power Facility
- Effects of Electron Irradiation at Different Energy and Fluences on Electrical Properties of InP HEMT Structure
- Simulation of X-ray-induced EMI Environment in Shell of SIP
化學(xué)
技術(shù)及應(yīng)用
- 宇宙射線繆子核材料快速檢測算法研究
- 新型鋯合金包殼材料商業(yè)反應(yīng)堆輻照考驗方案設(shè)計
- XG-Ⅲ裝置ps激光束線所致感生放射性評估研究
- 在線進樣ICP-MS用于239Pu氣溶膠活度濃度連續(xù)監(jiān)測技術(shù)研究
- 在線進樣ICP-MS用于239Pu氣溶膠活度濃度連續(xù)監(jiān)測技術(shù)研究
- 氚深度分布對β射線誘發(fā)X射線光譜法測量能譜中Ar(Kα)強度的影響
- 基于電子束掃描陣列微焦點射線源的倒置結(jié)構(gòu)Micro-CT成像研究
- 90Sr的加速器質(zhì)譜測量技術(shù)研究
- 激光驅(qū)動靶丸超高速發(fā)射研究
- H-1NF仿星器標(biāo)準磁場位形分析與高能量離子運動軌道模擬
- 三江特提斯南段構(gòu)造活動時限
——磷灰石裂變徑跡年齡新證據(jù)